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<< JRScience Home     Volume 17 No.2   April  2006     << Back to Volume Home

OPTICAL BAND GAP OF ZnO THIN FILMS DEPOSITED BY ELECTRON BEAM EVAPORATION 

M. Y. Nadeem, S. Liaqat Ali, M. F. Wasiq, A. M. Rana

Department of Physics, Bahauddin Zakariya University, Multan, Pakistan

Manzar Abbas

Pakistan Council of Renewable Energy Technologies, Islamabad

Abstract:

Optical band gap of ZnO thin films deposited by electron beam evaporation at evaporation rates ranging 5 Ås-1 to 15 Ås-1 and thickness ranging 1000Å to 3000Å is presented. Deposited films were annealed at 573K for one and half hour. The variations in the optical band gap were observed and showed decreasing behavior from 3.15eV to 3.05 eV, from 3.18 eV to 3.10 eV and from 3.19 eV to 3.18 eV for films with respective thickness 1000Å, 2000 Å, 3000 Å on increasing the evaporation rate from 5 Ås-1 to 15 Ås-1 by keeping thickness constant.

Keywords: Optical absorption, optical band gap, ZnO thin films.